BB640... Silicon Variable Capacitance Diode • For VHF TV / VTR tuners • Pb-free (RoHS compliant) package BB640 (cid:1) (cid:2) Type Package Configuration L (nH) Marking S BB640 SOD323 single 1.8 red S Maximum Ratings at T = 25°C, unless otherwise specified A Parameter Symbol Value Unit Diode reverse voltage V 30 V R Peak reverse voltage V 35 RM ( R ≥ 5kΩ ) Forward current I 20 mA F Operating temperature range T -55 ... 150 °C op Storage temperature T -55 ... 150 stg 1 2011-06-15

BB640... Electrical Characteristics at T = 25°C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current I nA R V = 30 V - - 10 R V = 30 V, T = 85 °C - - 200 R A AC Characteristics Diode capacitance C pF T V = 1 V, f = 1 MHz 62 69 76 R V = 2 V, f = 1 MHz 47.5 54.5 61.5 R V = 25 V, f = 1 MHz 2.85 3.28 3.7 R V = 28 V, f = 1 MHz 2.8 3.05 3.3 R Capacitance ratio C /C 19.5 - 25 T1 T28 V = 1 V, V = 28 V, f = 1 MHz R R Capacitance ratio C /C 15 16.6 - T2 T25 V = 2 V, V = 25 V, f = 1 MHz R R Capacitance matching1) ∆C /C - - 2.5 % T T V = 1 V, V = 28 V, f = 1 MHz R R Series resistance r - 1.15 - Ω S C = 12 pF, f = 100 MHz T 1For details please refer to Application Note 047. 2 2011-06-15

BB640... Diode capacitance C = ƒ (V ) Temperature coefficient of the diode T R f = 1MHz capacitance T = ƒ (V ) Cc R 100 EHD07045 10 -3 pF C 90 T 80 1/°C 70 c C 60 T 50 10 -4 40 30 20 10 0 10 -5 10-1 100 101 V 102 10 0 10 1 V 10 2 V V R R Reverse current I = ƒ (T ) Reverse current I = ƒ(V ) R A R R V = 28V T = Parameter R A 10 -9 300 pA 10 -10 200 R R I I 150 10 -11 85°C 25°C 100 10 -12 0°C 50 0 10 -13 0 10 20 30 40 50 60 70 80 °C 100 0 4 8 12 16 20 24 V 30 T V A R 3 2011-06-15

Package SOD323 BB640... 4 2011-06-15

BB640... Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 5 2011-06-15

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